@Ignattious you clearly have no understanding of 4DS Memory and the industry they are playing in.
4DS Memory is not competing with NAND Flash.
While retention is a crucial factor, its significance is relatively lower when pursuing the $105 billion USD DRAM market.
4DS Memory is not focused on achieving a 10-year retention period. For instance, Intel Optane PMem had a retention period of 3 months and speed with a clocked time of 350 nanoseconds.
4DS memory have stated the following "
retention persistence is clearly evident but remain an addressable priority that will be driven by industry and potential strategic partners as to what levels of retention might be best define their strategic and commercial plans. As such, robust retention testing was not prioritized in this test cycle".
The fact 4DS Memory have high Endurance and are yet to quantify the upper limits only means more tunable options for speed and retention.
The most reliable information we currently have regarding Retention comes from the former 4DS Memory CTO, as published on his LinkedIn page.
The 4DS Memory results provided below are derived from 60nm Memory Cells. Consider the potential performance advancements if they were to scale down to, for instance, 14nm. The results achieved at 60nm are already considered revolutionary and have the potential to significantly disrupt the market.
