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A DRAM module with a read and write speed of 27 nanoseconds (ns)...

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    A DRAM module with a read and write speed of 27 nanoseconds (ns) and a specified endurance of 2 billion cycles is a significant technological advancement. Endurance in DRAM refers to the number of read and write cycles a module can withstand before it begins to degrade or fail.
    So, while DRAM advancements can improve speed and latency, they won't inherently provide data persistence. You would need to consider different memory or storage technologies for that purpose.

    Enter 4ds.
 
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