Ann: Preliminary Final Report, page-270

Earth Mountain with another patent re manufacturing - solving the issues pretty consistently:

The invention discloses a pixel sounding unit, a manufacturing method thereof, and a digital sounding chip, and relates to the technical field of microelectronics manufacturing to solve the problem of poor safety and reliability of the pixel sounding unit. The pixel sound unit includes an electrode structure layer, a diaphragm, a support structure and an electrical isolation layer, the support structure is arranged between the electrode structure layer and the diaphragm, and the support structure includes a plurality of supports distributed at intervals on the electrode structure layer; The isolation layer is stacked on the electrode structure layer and the support structure, and is used to electrically isolate the electrode structure layer and the diaphragm. The digital sound chip includes the pixel sound unit mentioned in the above technical solution. The manufacturing method of the pixel sound unit It includes the pixel sound unit mentioned in the above technical solution.

Claim
1. A pixel sound unit, comprising an electrode structure layer and a diaphragm, is characterized in that, also includes:
a support structure, disposed between the electrode structure layer and the diaphragm, the support structure comprising a plurality of supports spaced apart on the electrode structure layer;
The electrical isolation layer is laminated on the electrode structure layer and the support structure, and is used for electrically isolating the electrode structure layer and the diaphragm.
2. The pixel sound unit according to claim 1, characterized in that, the electrode structure layer comprises a split ring groove, and the split ring groove divides the electrode structure layer into a ring inside and a ring outside, and the ring inside Electrically isolated from the outside of the ring, the support is located on the inside of the ring.
3 . The pixel sound unit according to claim 2 , wherein the split ring groove is filled with an insulating structure.
4 .The pixel sound emitting unit according to claim 3, wherein the insulating structure is integrated with the electrical isolation layer.
5 . The pixel sound emitting unit according to claim 2 , wherein the split ring groove is a ring structure, and the difference between the inner diameter and the outer diameter of the split ring groove is 0.5 μm˜2 μm. 6 .
6. The pixel sound unit according to claim 5, wherein the support body is a cylindrical structure, and the part of the electrical isolation layer stacked on the support body has rounded corners;
The diameter of the cross-section of the support body is 1 μm˜5 μm, and the difference between the inner diameter of the split ring groove and the outer diameter of the support body is 1 μm˜3 μm.
7. The pixel sound unit according to claim 1, characterized in that, the material of the support is silicon dioxide or silicon nitride, and the height of the support is 150nm-300nm;
And/or, the material of the electrical isolation layer is silicon nitride, and the thickness of the electrical isolation layer is 150 nm˜500 nm.
8 . The pixel sound emitting unit according to claim 1 , wherein a plurality of the support bodies are arranged in an array.
9. A digital sounding chip, characterized in that it comprises the pixel sounding unit according to any one of claims 1 to 8.
10. A method for manufacturing a pixel sound unit, comprising the pixel sound unit according to any one of claims 1 to 8, the manufacturing method comprising:
providing an electrode structure layer;
Depositing and forming a first dielectric layer on the electrode structure layer;
Etching the first dielectric layer to form a supporting structure, the supporting structure includes a plurality of supporting bodies distributed at intervals on the electrode structure layer;
Etching the electrode structure layer to form a split ring groove, the split ring groove divides the electrode structure layer into an electrically isolated ring inside and a ring outside, and the support is located on the ring inside;
A second dielectric layer is deposited on the electrode structure layer and the first dielectric layer, the second dielectric layer is partially stacked on the electrode structure layer and the support structure to form an electrical isolation layer, and the second dielectric layer A layer is partially filled in the split ring groove to electrically isolate the inside of the ring from the outside of the ring.