The invention discloses a speaker manufacturing method and the speaker, relates to the technical field of speakers, and is used to ensure that each speaker has high quality in the case of batch manufacturing. The manufacturing method of the speaker includes: providing a first semiconductor substrate and a second semiconductor substrate; wherein the first semiconductor substrate has a first bonding interconnection surface, and the second semiconductor substrate has a second bonding interconnection surface; in the first On the bonding interconnection surface, the first semiconductor substrate is etched to form a shallow groove structure and a lower electrode; on the second bonding interconnection surface, the second semiconductor substrate is etched to form a vibration structure; the first semiconductor substrate is bonded to the first semiconductor substrate. a bonding interconnection surface and a second bonding interconnection surface of the second semiconductor substrate; forming an upper electrode on the other side of the second semiconductor substrate away from the second bonding interconnection surface, and forming an upper electrode on the first semiconductor substrate away from the first bonding surface The other side of the interconnection surface forms the back cavity; the lower electrode, vibration structure and upper electrode are released to obtain a speaker.
1. A method of manufacturing a loudspeaker, characterized in that it includes:
A first semiconductor substrate and a second semiconductor substrate are provided; wherein the first semiconductor substrate has a first bonding interconnection surface and the second semiconductor substrate has a second bonding interconnection surface;
Etching the first semiconductor substrate on the first bonding interconnection surface to form a shallow trench structure and a lower electrode located under the shallow trench structure;
Etching the second semiconductor substrate on the second bonding interconnection surface to form a vibration structure;
bonding a first bonding interconnection surface of the first semiconductor substrate and a second bonding interconnection surface of the second semiconductor substrate;
Form an upper electrode on the other side of the second semiconductor substrate away from the second bonding interconnection surface, and form a back cavity on the other side of the first semiconductor substrate away from the first bonding interconnection surface;
The lower electrode, the vibration structure and the upper electrode are released to obtain a speaker.
2. The method of manufacturing a speaker according to claim 1, wherein the first semiconductor substrate and the second semiconductor substrate are SOI substrates; wherein,
The first bonding interconnection surface of the first semiconductor substrate and the second bonding interconnection surface of the second semiconductor substrate are both the upper surface of the top silicon included in the SOI substrate.
3. The method of manufacturing a speaker according to claim 2, wherein the volume resistivity of the top silicon included in the first semiconductor substrate and the second semiconductor substrate is less than 0.1Ω*cm; and/or,
The thickness of the top layer of silicon included in the second semiconductor substrate is 1 μm to 10 μm; and/or,
The thickness of the buried oxide layer included in the first semiconductor substrate and the second semiconductor substrate is 0.5 μm to 3 μm.
4. The method of manufacturing a speaker according to claim 2, wherein the first bonding interconnection surface bonding the first semiconductor substrate and the second bonding interconnection of the second semiconductor substrate After the surface and before forming an upper electrode on the other surface of the second semiconductor substrate away from the second bonding interconnection surface, the manufacturing method of the speaker further includes:
Perform a thinning process on the back substrate of the second semiconductor substrate to obtain a semiconductor layer with a preset thickness;
Process the second semiconductor substrate to form a lead pattern;
Forming an upper electrode on the other side of the second semiconductor substrate away from the second bonding interconnection surface includes:
The semiconductor layer is processed using a photolithography process and a reactive ion etching process to obtain the upper electrode.
5. The method of manufacturing a speaker according to claim 4, wherein the second semiconductor substrate is processed by a sputter etching process or an evaporation stripping process to form the lead pattern.
6. The method of manufacturing a speaker according to claim 4, wherein a first contact hole and a second contact hole are formed on the second semiconductor substrate; the first contact hole penetrates the semiconductor layer and the The second semiconductor substrate has a buried oxide layer; the second contact hole penetrates the second semiconductor substrate;
The lead pattern includes a first contact structure, a second contact structure and a third contact structure; the first contact structure is located on a side of the semiconductor layer away from the first semiconductor substrate, and the first contact structure is connected to the first contact structure. The above electrodes are electrically connected; the second contact structure is located at the bottom of the first contact hole, the second contact structure is electrically connected to the vibration structure; the third contact structure is located at the second contact hole At the bottom of the hole, the third contact structure is electrically connected to the lower electrode.
7. The method of manufacturing a speaker according to claim 2, wherein releasing the lower electrode, the vibration structure and the upper electrode includes:
removing the portion of the buried oxide layer included in the first semiconductor substrate and the second semiconductor substrate located in a predetermined area; wherein,
The predetermined area is the area between the upper electrode and the vibration structure, and the area between the lower electrode and the cavity bottom of the back cavity.
8. The method of manufacturing a speaker according to claim 7, wherein a HF release etching process is used to remove the portion of the buried oxide layer located in the predetermined area.
9. The speaker manufacturing method according to any one of claims 1 to 8, characterized in that the depth of the shallow groove structure is 1 μm to 5 μm; and/or,
The height of the lower electrode is 1 μm to 10 μm.
10. A speaker, characterized in that the speaker is manufactured using the speaker manufacturing method according to any one of claims 1 to 9.
Technical field
The present invention relates to the technical field of loudspeakers, and in particular to a manufacturing method of a loudspeaker and a loudspeaker.
Background technique
A speaker is a transducer device that can convert electrical signals into acoustic signals. It is one of the important components of acoustic equipment such as speakers, so the performance of the speaker has a great impact on the sound quality of the acoustic equipment.
However, each component of the existing speaker is processed using traditional machining methods. Moreover, the integrated assembly of each component of the speaker is achieved through the assembly process. In this case, the performance consistency of the loudspeakers obtained through batch manufacturing using existing manufacturing methods is poor, making the quality of the loudspeakers unguaranteed.
Contents of the invention
The object of the present invention is to provide a speaker manufacturing method and a speaker to ensure that each speaker has high quality in the case of mass manufacturing.
In order to achieve the above object, the present invention provides a manufacturing method of a speaker. The manufacturing method of the speaker includes:
A first semiconductor substrate and a second semiconductor substrate are provided; wherein the first semiconductor substrate has a first bonding interconnection surface and the second semiconductor substrate has a second bonding interconnection surface;
Etching the first semiconductor substrate on the first bonding interconnection surface to form a shallow trench structure and a lower electrode located under the shallow trench structure;
Etching the second semiconductor substrate on the second bonding interconnection surface to form a vibration structure;
bonding a first bonding interconnection surface of the first semiconductor substrate and a second bonding interconnection surface of the second semiconductor substrate;
forming an upper electrode on the other side of the second semiconductor substrate away from the second bonding interconnection surface, and forming a back cavity on the other side of the first semiconductor substrate away from the first bonding interconnection surface;
Release the lower electrode, vibrating structure and upper electrode to obtain the speaker.
Compared with the prior art, in the speaker manufacturing method provided by the present invention, the shallow groove structure and the lower electrode are formed by etching the first semiconductor substrate on the first bonding interconnection surface. The vibration structure is formed by etching the second semiconductor substrate on the second bonding interconnection surface. Moreover, the first semiconductor substrate and the second semiconductor substrate can be tightly bonded together through bonding, thereby improving the structural stability of the speaker. Then, an upper electrode is formed on the other side of the second semiconductor substrate away from the second bonding interconnection surface, and a back cavity is formed on the other side of the first semiconductor substrate away from the first bonding interconnection surface, by releasing the lower electrode and the vibration structure and upper electrodes, a speaker can be obtained. It can be seen from the above that the speaker manufacturing method provided by the present invention is to manufacture the speaker through microelectronic machining technology. Because microelectronic machining technology integrates various micro-machining technologies such as photolithography, etching, thin film, silicon micromachining, and non-silicon micromachining, it can achieve the manufacturing of high-precision three-dimensional microstructures. Therefore, microelectronic machining can High-performance speakers are obtained in mass manufacturing, thereby ensuring the quality of each speaker.
The present invention also provides a speaker, which is manufactured using the speaker manufacturing method provided by the above technical solution.
Compared with the prior art, the beneficial effects of the speaker provided by the present invention are the same as the beneficial effects of the speaker manufacturing method provided by the above technical solution, and will not be described again here.
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