Thanks for this Flect...some interesting and relevant info in these links for us shareholders.
Some info gleaned from the eejournal speaks well for 4DS...
"….it (4DS) is developing memristor-based ReRAM as a licensableprocess technology that’s compatible with advanced CMOS manufacturing processes.
The working 20nm device (to be fabricated at IMEC) will also have a1Mbit capacity but will demonstrate a cell density that could be used tofabricate a 1.6Gbit ReRAM chip.
The 4DS memristor cell exhibits some favourable memory characteristics.The cell’s write time is a fast 4.7 nsec, which is comparable to DRAM speeds.Demonstrated endurance for the cell is 109 write cycles, which far exceeds NAND Flash memoryendurance by orders of magnitude. The scaled 20nm cells approach the density ofDRAM cells…..
One characteristic where the 4DS area-based memristor cell differs fromthe filament-based memristor cells is persistence. Filament-based memristorcells are non-volatile. Essentially, they are infinitely persistent. The 4DSarea-based memory cell is variably persistent, with data-retention timesranging from hours to months. Retention time depends on the length and strengthof the programming pulse. A longer, stronger pulse drives out more oxygen atomsfrom deeper within the PCMO layer, extending the retention time. Consequently,it’s possible to electrically partition a memory device based on these 4DSmemristor cells into longer- and shorter-duration persistence blocks, allowinga dynamic tradeoff between retention time and programming speed.
One additional memristor characteristic, yet to be fully explored, isthe direct storage of analog values in the 4DS memristor cell usingvariable-length, variable-strength programming pulses. If this ability provesreliable and repeatable, it might be possible to store the neural networkweights directly as analog quantities, which would greatly improve the storagedensity of the 4DS memristor cell in neural network applications and make thetechnology very attractive as on-chip memory for AI chip design. However, 4DShas not yet characterized this attribute of its memristor cells, so we’ll needto wait and see if this is a viable application for the 4DS memristortechnology."
(20min delay)