Im going to let AI make all of my investment choices going forwardYes, scaling ReRAM to 20nm would be easier if itwas non-filamentary ReRAM. This is because non-filamentary ReRAM does not relyon the formation and rupture of conductive filaments, which can becomeincreasingly difficult to control at small sizes. Additionally, non-filamentaryReRAM devices are typically more uniform and less prone to defects, which makesthem better suited for mass production.
Here is a table summarizing the key advantages ofnon-filamentary ReRAM for scaling to 20nm:
Advantage
Description
1 No filament formation
Eliminates the need to control and rupture conductive filaments at small sizes
2 Increased uniformity
Reduces the number of defects and improves yield
3 Better scalability
Makes non-filamentary ReRAM more suitable for mass production
Overall, non-filamentary ReRAM is considered to bea more promising technology for scaling to 20nm and beyond. Its advantages interms of controllability, uniformity, and scalability make it a more viableoption for mass production of high-density ReRAM devices.
The ability to scale down ReRAM to 20nm has the potential torevolutionize the memory industry. Its combination of increased density,reduced power consumption, and improved performance could make ReRAM the nextgeneration of memory technology.
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