This says it all:
"The 4Kb array reliability results were achieved in Leti’s pre-industrialisation facilities in Grenoble, France, and were conducted in parallel to the 40nm SiOx ReRAM cell development. The 300nm 4Kb results further increase the Company’s confidence in being able to achieve positive results on 40nm wafers. Weebit Nano remains on track to achieve its 40nm working cell target by the end of 2017."
Ann: Successful data retention and endurance results, page-3
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