Ann: Suspension from Official Quotation, page-151

Also, if you are down at 10nm and/or below then you are beyond the CMOS transistor logic & therefore using one of the FET devices to effect your memory switching.. Which would appear to also be technical in nature and perhaps due an update? :-0 ??

Bearing in mind that the new process breakthroughs were compatible with both DRAM & NAND production...... Just sayin hehe ;-)

17 August 2021
4DS TECHNICAL UPDATE
• New process breakthroughs have made 4DS’ Interface Switching ReRAM technology fully compatible
with state-of-the-art high-volume DRAM and NAND production processes

• Third Non-Platform Lot wafers yielded an order of magnitude decrease in cell on-resistance, which
translates into an up to one order of magnitude boost in read speed

• Second Platform Lot wafers demonstrated both device-scaling to imec’s minimum geometry and
memory switching with an access device on 300mm wafers using state-of-the-art production
equipment

• Third Platform Lot utilizing imec’s megabit memory platform is planned to start late Q3 2021

• HGST (100% subsidiary of Western Digital Inc) requests technical update to share the detailed results
of these two lots