Ann: WBT reaches silicon oxide ReRAM 1Mb array at 40nm milestone, page-96

Is this what you were looking for? "The characterisation measurement was performed on 300nm 4Kb memory array cell structures under a variety of temperature and duration conditions at 150°C, 200°C and 260°C, monitoring the ability of the ReRAM cells to maintain their resistivity levels within industry acceptable ranges. The 260°C temperature is of great importance as it is the temperature used when soldering chipsets into printed circuit boards. Weebit Nano’s 4Kb array maintained its programmed data after 30 minutes at 260°C, exceeding the soldering requirement of 15 minutes at this temperature and allowing several soldering cycles."