The "informed investor" would see this as price sensitive I...

The "informed investor" would see this as price sensitive I believe - not the asx though!

Weebit scaling down its ReRAM technology to 22nm
• Collaboration with CEA-Leti targets 22nm FD-SOI process
• Addresses the need for new non-volatile memory at one of the industry’s most common
process nodes, where existing embedded Flash technology is no longer viable
15 March 2022

Weebit Nano Limited (ASX:WBT; Weebit or the Company), a leading developer of next-generation
memory technologies for the global semiconductor industry, is pleased to announce that together
with CEA-Leti it is scaling its embedded Resistive Random-Access Memory (ReRAM) technology down
to 22nm – one of the industry’s most common process nodes. The two companies are designing a full
IP memory module that integrates a multi-megabit ReRAM block targeting an advanced 22nm Fully
Depleted Silicon On Insulator (FDSOI)1 process.

Weebit’s first silicon wafers that integrate its embedded ReRAM module at 130nm have shown
positive early test results, and the Company has successfully demonstrated production level
parameters at 28nm. Now, with a strong balance sheet in place, Weebit is rapidly accelerating its
development plans to scale its technology to process nodes where existing embedded Flash
technology is no longer viable.

Coby Hanoch, CEO of Weebit Nano, said: “We are excited to be developing our next memory module
on a 22nm FD-SOI process. We continue to progress Weebit’s memory technology to smaller
geometries that serve applications such as IoT, 5G and AI, which are driving the need for a new type
of non-volatile memory in process nodes where embedded flash is no longer a realistic option. We
have embarked on this new 22nm program to enable future customers to use our ReRAM technology
to create exciting new products in advanced geometries.”

Olivier Faynot, Head of Silicon Component Division, CEA-Leti, said: “FD-SOI technology provides
exceptional performance at very low voltages with low leakage and is broadly adopted by the industry.
Combining ReRAM technology with FD-SOI holds great promise for low-power embedded devices,
which need a new type of non-volatile memory and will benefit from its efficiency and robustness.”