Another patent for Translucent, page-5

With the exception of 2010, 2014 has been the best year for patents being granted, but 2014 isn't over yet, is it!.
I'm not sure whether Translucent could possibly hasten the patent process or not?
I very much doubt that they could somehow!
but there seems to be a sudden rush on approvals recently, doesn't there?
Was the timing of this planned or was it just the natural progression of the patent process, I believe it was the latter somehow?

People here need to understand that without patent protection, Translucent would be between a rock and a hard place if they wanted to either, License, Sell, or even use their own IP in any production run that they wanted, they would have been crazy to attempt any of those things without patent protection, and these things take time, this could be the main reason for the delays in bringing their technologies to market, it is just something else that the management at Translucent?Silex had no control over, it's similar to when GLE made it's decision to go slow, you will notice they didn't say "we don't want the tech" did they? GLE have their reasons for going slow, the demand to LEU being one of them I suppose, but that will change soon, that was also beyond Silex managements control wasn't it?
We also had the fact, that the Australia Government is against renewable's,
they are backing the dirty coal fired power industry, with whom they are in bed with, for a short while anyway!
That was also beyond the control of Silex management as well, but what will definitely mean one thing for sure, the leading edge technology that Solar Systems have will now go O/S, you can blame the Oz government for that,
and during all of this we had the GFC going on in the background and of course we had the grand daddy of them all, the Fukushima Daiichi nuclear disaster, I suppose there are some here who will blame Silex management for that too.

Our company has faced a perfect storm in many ways, but now comes the time when they must deliver, that much I can agree on, and with some of these patents now bedded down, I believe that time is getting nearer, I believe management has been waiting on the approval of some of these patents before making their move, something I believe was wise on managements part, because if they had moved before they were granted, well you know the story about how technology is stolen.





Patents

2014

• US 8,835,955 IIIOxNy on single crystal SOI substrate and III N growth platform
• US 8,796,121 Stress mitigating amorphous SiO2 interlayer
• US 8,794,010 Laser cooling of modified SOI wafer
• US 8,748,900 RE-Silicide gate electrode for III-N device on SI substrate
• US 8,680,507 AlN inter-layers in III-N material grown on DBR/silicon substrate
• US 8,679,953 Crystalline REO template on silicon substrate
• US 8,664,735 IR Sensor using REO up-conversion
• US 8,637,763 Solar cells with engineered spectral conversion
• US 8,636,844 Oxygen engineered single-crystal REO template
• US 8,633,569 AlN inter-layers in III-N material growth on REO/silicon substrate
• US 8,623,747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices

2013

• US 8,623,747 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices
• US 8,559,097 Integrated pump laser and rare earth waveguid amplifier
• US 8,553,741 Integrated rare earth devices
• US 8,542,437 Earth Abundant Photonic Structures
• US 8,501,635 Modification of REO by subsequent III-N epi process
• US 8,455,881 Ge quantum dots for dislocation engineering of III-N on silicon
• US 8,455,756 High efficiency solar cell using IIIB material transition layers
• US 8,394,194 Single crystal reo buffer on amorphous SiOx

2012

• US 8,331,413 Integrated rare earth devices
• US 8,331,410 Spontaneous/stimulated light emitting μ-cavity device
• US 8,178,841 Monolithically integrated IR imaging using rare-earth up conversion materials
• US 8,106,381 Semiconductor structures with rare-earths

2011

• US 8,071,872 Thin film semi-conductor-on-glass solar cell devices
• US 8,049,100 Multijunction rare earth solar cell
• US 8,039,738 Active rare earth tandem solar cell
• US 8,039,737 Passive rare earth tandem solar cell
• US 8,039,736 Photovoltaic up conversion and down conversion using rare earths

2010

• US 7,967,653 Full Color Display
• US 7,968,384 Stacked Transistors and Process
• US 7,928,317 Thin film solar cell
• US 7,902,546 Rare earth-oxides, rare earth-nitrides, rare earth -phosphides, and ternary alloys with silicon
• US 7,863,139 Double gate FET and fabrication process
• US 7,825,470 Transistor and in-situ fabrication process
• US 7,821,066 Multilayered box in FDSOI MOSFETS
• US 7,807,917 Thermoelectric and pyroelectric energy conversion devices
• US 7,709,826 Rare earth-oxides, rare earth-nitrides, rare earth -phosphies, and ternary alloys with silicon
• US 7,675,117 Multi-gate field effect transustor
• US 7,655,327 Composition comprising rare earth dielectric
• US 7,646,066 Double gate FET and fabrication processes
• US 7,645,517 Rare earth oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
• US 7,643,526 Spontaneous / stimulated light emitting micro cavity device

2009

• US 7,605,531 Full color display
• US 7,586,177 Semiconductor-on-insulator silicon wafer
• US 7,579,623 Stacked transistors and processes
• US 7,538,016 Signal and/or ground planes with double buried insulator layers
• US 7,498,229 Transistor and in-situ fabrication process
• US 7,476,600 FET Gate structure and fabrication process

2008

• US 7,432,569 FET Gate structure and fabrication process
• US 7,416,959 Silicon-on-insulator semiconductor wafer
• US 7,388,230 Selective colored light emitting diode
• US 7,384,481 Method of forming a rare-earth dielectric layer
• US 7,365,357 Strain inducing multi-layer cap
• US 7,364,974 Double gate FET and fabrication process
• US 7,355,269 IC on non-semiconductor substrate
• US 7,351,993 Rare earth oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
• US 7,323,396 Single and / or ground planes with double buried insulator layers and fabrication process

2007

• US 7,273,657 Rare earth oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon
• US 7,253,080 Semiconductor-on-insulator silicon wafer
• US 7,217,636 Semiconductor-on-insulator silicon wafer
• US 7,211,821 Devices with optical gain in silicon
• US 7,199,015 Rare earth oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon

2006

• US 7,135,699 Method & apparatus for the growth of single crystal rare earth oxides, nitrides and phosphides
• US 7,037,806 Silicon-on-insulator semiconductor wafer
• US 7,023,011 Devices with optical gain in silicon
• US 7,018,484 Semiconductor-on-insulator wafer and method of formation

2005

• US 6,858,864 Devices with optical gain in silicon

2004

• US 6,734,453 Devices with optical gain in silicon

Trademarks

• vGe™ - Virtual Germanium
• vGaN™ - Virtual Gallium Nitride
• cSOI™ - Crystalline Semiconductor-On-Insulator
• cREO™ - Crystalline Rare Earth Oxide
• 345CELL™ - A multijunction solar cell incorporating elements from group III, IV and V of the periodic table
• vFET™ - A field effect transistor on a virtual substrate