I couldn't find the presentations. Maybe they haven't uploaded them all yet. I did find the below information:NEWM-202A-1: RRAM (New Memory Technologies Track) Wednesday 3:20
Organizer + Chairperson: Dave Eggleston, Principal, Intuitive Cognition Consulting
Paper Title: Making SiOx ReRAM a Cost-effective Embedded Memory
Paper Abstract: Among emerging NVM technologies, ReRAM’s process simplicity, low power consumption, and fast switching make it a compelling candidate for embedded NVM (eNVM) in low-power, always-connected devices. Commercializing ReRAM designs requires the ability to understand and control important factors affecting ReRAM performance and reliability. These include switching layer composition, density, and geometrical dimensions.
Paper Author: Amir Regev, CTO, Weebit-nano
Author Bio: Amir Regev is the Chief Technology Officer (CTO) and co-founder of Weebit-nano, an Israeli start-up. Amir manages ReRAM technology development with CEA/Leti, a French R&D organization. Prior to founding Weebit, he developed device and technology for emerging memories and flash at Intel, SanDisk, Micron and Marvell. Amir holds a M.Sc. in Electrical Engineering from Tel-Aviv University and a B.Sc. in Material Science and Engineering from Ben-Gurion University. In 2015 Amir graduated with a B.A. honors in Psychology from the Open University of Israel.
AIML-301-1:Using AI/ML for Flash Performance Scaling, Part 1 (AI/Machine Learning Track) Thursday 8:30
Chairperson: Ali Keshavarzi, Adjunct Professor, Stanford University
Organizer: Brian Berg, President, Berg Software Design
Paper Title: ReRAM for Implementing Neural Network Synapses
Paper Abstract: ReRAM technology is widely considered the best candidate for implementing artificial synapses for neuromorphic computing. The movement of ionic species in ReRAM cells closely resembles mechanisms typical of biological synapses in the human brain. Furthermore, neuromorphic circuits demonstrate good resilience to the intrinsic device variability and noise typical of ReRAM. A CEA/Leti test vehicle uses SiOx resistive memories from Weebit in a neuromorphic architecture to demonstrate a spiking neural network (SNN) composed of analog neurons and resistive synapses. The chosen topology is a fully-connected single-layer SNN, which can handle up to 144-dimensional input vectors and 10 output classes. The designed-integrate and fires neurons allow the use of existing supervised offline learning tools. Digit recognition using this SNN on the MNIST database will be demonstrated.
Paper Author: Amir Regev, CTO, Weebit-nano
Author Bio: Amir regev is the Chief Technology Officer (CTO) of Weebit-nano and one of its technology founders and leader. Amir career exceeds two decades of experience in device and technology for the semiconductor industry, with particular expertise in Emerging memory and Flash memory development. Prior to establishing Weebit-Nano, Amir took senior Engineering roles leading technology companies in the semiconductor and memory field, including Intel, SanDisk Micron and Marvell accumulating broad knowledge and expertise in multiple engineering fields including Device, Technology Development, Quality & Reliability, and ASIC R&D. Amir was involved in developing the most advanced 45nm NOR Flash technology to date. Amir holds a M.Sc. in Electrical Engineering from Tel-Aviv University and a B.Sc. in Material Science and Engineering from Ben-Gurion University. In 2015 Amir graduated with a B.A. honors in Psychology from the Open University of Israel.
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G2M Research FMS 2019 Interview with Weebit Nano Video, page-12
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