Another new use for hafnium (and lanthanum):
Solution-processed high-K dielectrics for oxide thin-film transistors (TFTs) have been widely studied with the objective of achieving high performance and low-cost TFTs for next-generation displays. In this study, we introduce an amorphous hafnium-lanthanum oxide (HfLaOx) gate insulator with high electrical permittivity which was fabricated by the simple spin-coating method. ... We believe that this amorphous HfLaOx dielectric has good potential for next-generation high-performance TFT devices.
http://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/c3tc31727g#!divAbstract
And another one
http://www.google.com/patents/WO2014144397A2?cl=en
Yep, looking into Hafnium production sure seems worth our while ...
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