[The Guru=Reporter Ye-rin Jeong] DB HiTek will be unveiling for the first time the actual next-generation non-volatile memory (NVM) chip based on ReRAM (resistive memory) from Israel's 'Weebit Nano'. The two companies plan to use this unveiling as an opportunity to transition to a full-scale mass production system within the year and accelerate their conquest of the high-reliability power semiconductor market.
According to Wibit Nano on the 7th, DB HiTek and Wibit Nano will participate in the 'PCIM 2025', the largest power semiconductor exhibition in Europe, held in Nuremberg, Germany for three days starting on the 6th (local time). They will conduct an edge artificial intelligence (AI) gesture recognition demo using DB HiTek's 130nm bipolar-CMOS-DMOS (BCD) process-based prototype semiconductor equipped with Wibit Nano's ReRAM.
Currently, the technology is undergoing qualification certification within DB HiTek’s 130nm process, and the goal is to transition to mass production within the year. DB HiTek plans to provide customers with a design kit (PDK) that includes the memory in the future, and customers can use the standard 1Mb module as is or proceed with a customized design as needed.
The qualification stage is a procedure to evaluate whether a product is suitable for mass production, and is a process to ensure product quality through performance verification and reliability testing. Upon completion of this stage, the technology is ready for full-scale mass production.
DB HiTek signed a license agreement for ReRAM technology with Wibit Nano in 2023 and began work in earnest to integrate ReRAM into the 130nm BCD process. With the successful tapeout (the stage where the design is completed and moved to production) last year, it set an important milestone in preparation for the commercialization of ReRAM-based BCD 130nm process chips.
ReRAM is a nonvolatile memory that can retain information even when the power is off, and it consumes less power and is faster than flash memory. Wibitnano explains that it is up to 1,000 times faster and 1,000 times more energy efficient than flash memory. In particular, it is suitable for high-reliability semiconductors such as industrial, automotive, and IoT because it has excellent data retention even at high temperatures.
“We are gradually preparing for mass production by integrating our ReRAM IP into DB HiTek’s 130nm BCD process,” said Coby Hanoch, CEO of Wibitnano. “This demonstration is the first to reveal this integrated technology and will demonstrate the advantages of integrating ReRAM within a chip.”
“Webitnano’s ReRAM provides cost-effective, high-density non-volatile memory in a 130nm BCD process,” said Jo Gi-seok, CEO of DB HiTek. “PCIM is an important exhibition that expands DB HiTek’s footprint in the growing European market, and we are very pleased to be able to showcase our integrated solution together with Webitnano.”
All IMHO, DYOR
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