Industry related on topic, page-1236

GSSN ots selector as per recent patent info posted here in the threads


At the device level the vehicle for this investigation was a memory cell stack (illustrated above) which combined the team’s very low leakage, best-in-class, Nitrogen doped Germanium Selenium, Antimony (GSSN) selector with a Hafnium Oxide resistive memory device.'

with thanks to Ron Neale / the memory guy who deep dived this when it first popped up in Leti back in 2019/20
https://thememoryguy.com/chalcogenide-selectors-and-oxide-memory-move-towards-1gbit/
best in class sounds pretty good

of course the alternate view is
beware the pump and dumper ....lol

worth the wait no question