'a modest programming voltage overdrive that curbs drift without sacrificing the efficiency advantages of the WT technique.'
write termination ion/conductance drift is an inherent issue in emerging reram limiting endurance gains and retention integrity affecting performance and memory lifecycle
implementing fine grained power gating along with 'sigma' resistive state stability thereby determining the resistive state of the cell is unique and a first in resistive / nvm in the space. STMicro seem to have achieved a similar 'stability' by introducing a heater on their recent pcm GST nvm however this does not achieve the same retention performance gains as it captures and maintains a set % of the conductance drift offering a constant, not an improvement.
great achievement by weebit imo - memory in compute another step closer
WBT Price at posting:
$1.89 Sentiment: None Disclosure: Held
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