12 June 2025 dorsaViSecures Exclusive Worldwide Licence to...

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    12 June 2025 dorsaVi
    Secures Exclusive Worldwide Licence to Advanced RRAM Technology from NTU Singapore Transformational IP portfolio to power next-generation smart sensors across healthcare, AI, and IoT.

    Key Highlights:
    ● Worldwide Licence Secured with dorsaVi signing exclusive worldwide rights to a cutting-edge resistive random-access memory (RRAM) technology developed by Nanyang Technological University, Singapore (NTU Singapore).

    ● Nine Patent/IP Inventions Families covering broad applications across AI, Spatial Computing (AR, VR, XR), IoT, Edge Computing, Automotive, Robotics and Wearable Health-Tech.

    ● One of the key RRAM innovations focus on the tailoring of the main memory layer material with specific defects density to achieve stable operation under low voltage operation, which is suitable for energy conscious electronics.

    ● Another key RRAM innovation puts an emphasis on the interface enhancement through a novel plasma treatment and ion obstruction barrier. Achieving a thermally robust structure with ultra-high endurance capability.

    ● RRAM technology offers a robust versatile solution to not only memory problem but also a significant improvement on a system level, through its excellent performance characteristics, such as high speed, scalability, endurance and retention while maintaining low power consumption, as well as its tunable properties to meet specific application requirements.

    ● dorsaVi is focused on developing innovative motion analysis device technologies for use in clinical applications, elite sports, and occupational health and safety using wearable sensor technology. Used in many aspects of detailed human movement and position to accurately capture, quantified, and assessed outside a biomechanics lab, in both real-time and real situations.

    ● Integration of RRAM into dorsaVi’s existing FDA-cleared sensors offers a more efficient system with RRAM as a non-volatile working memory component in tandem with legacy NAND flash as mass data storage, allowing low latency hybrid system with extended battery life and prolonged device lifespan.
 
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