@ceviche
"It seems their definition of ReRAM is broader than implied by creating and breaking a filament"
eMemory's description of their ReRAM is consistent with it being a filamentary type. However, they appear very cagey about the actual mechanism. This surprises me, as you would think the patents would be a matter of public record.
Non-filamentary ReRAM is also possible (4DS is an example). Phase change memory (no agreed acronym) is also strictly speaking a type of ReRAM, in as much as the phase change between amorphous and crystalline states causes a change in resistance across the cell, which is detected as the difference btween 0 & 1.
Both of these might also fit their description, but my money is on simple filamentary ReRAM.
Running discussion on SP, page-615
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