Running discussion on SP, page-7065

Maybe capacity is always something that fits in the "work in progress" section

IV. CONCLUSIONS AND PERSPECTIVES
We have developed a reliable ReRAM technology integrated in 28nm, showing intrinsic reliability of more than 105
cycles endurance, SMT compliance and stable resistance for 15h at 210°C. Both technology enhancements and forming
protocol optimization allowed to optimize the device performances. Then, using program and verify algorithm,
clear window margin was achieved with no fails on 1Mb array.

Besides the integration of ReRAM technology on 28nm
test vehicles, silicon demo wafers integrating Weebit’s
embedded ReRAM module were processed, what represents a
key step in allowing potential customers to test and validate
the technology, by testing the ReRAM parameters on
packaged chips within specific applications.
Next step is then to scale the ReRAM technology further
down to 22nm, designing a full IP memory module that
integrates a multi-megabit ReRAM block on FDSOI process.
Overall objective is to target MCU for embedded
applications, including automotive markets, but also open to
AI opportunities [24, 25] with state of art memory nodes.