While WBT may have the technology, the CEO needs to know his...

While WBT may have the technology, the CEO needs to know his subject..
CH spruiks at this investor meetings that weebit has the best reram engineers out of any reram company..
And also TSMC don't do custom reram engineering, just tells customers this is what we have use it or go else where.

Well this article demonstrates TSMC, Hsinchu, Taiwan, are leading the race in reram development,
Weebit Nano need to pull a finger out & use all their great engineering team's skills to at least be a follower & crack the 12nm market,
I would like them to be the leaders in this area, otherwise others may snag the race to the top 10 fabs..
So how close are WBT to producing a reram fab @12nm..?
The below article is an interesting read for shareholders.

Publisher: IEEE
Abstract:
Low-power wireless MCU devices for intelligent IoT applications are one of the key drivers for embedded non-volatile memory (eNVM) for technology nodes of 2xnm and beyond; in addition to high-performance advanced CMOS processes with excellent RF/analog devices, there is a need for high read throughput high-density embedded non-volatile memory to store CPU code as well as neural-network models for energy-efficient data-centric machine-learning edge computing. For this purpose, fully logic-compatible TMO-based resistive RAM (RRAM) is a promising candidate [1–3].In this work, a 32Mb RRAM macro with 0.0249μm2 bit cells is implemented using a 12nm ultra-low power FinFET technology. Several design solutions are also proposed to address key challenges, including a write-assist scheme to achieve high write endurance and data retention and a pipeline-read scheme for high read throughput. Silicon measurements show 10,000 write-cycle endurance, 10-year retention at 105∘C, and a 3.2GB/s read throughput.

Published in: 2024 IEEE International Solid-State Circuits Conference (ISSCC)
Date Added to IEEE Xplore: 13 March 2024
Conference Location: San Francisco, CA,
Authors: Are all TSMC Engineers

Ref: https://ieeexplore.ieee.org/document/10454367

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