"Is this the case with the 4DS Crystalline design?"
No, just the opposite. That is why 4DS have always maintained that their technology is aimed at "storage class memory" (which is to say operating computer memory that is nonvolatile and hence also serves as storage).
Their technology involves two dissimilar metal oxides, one of which I believe is hafnium oxide. This makes it quite incompatible with other semiconductor manufacturing processes, and therefore not feasible for use in embedded memory applications (too technically difficult to be cost effective).
They claim that as a non-filament-based ReRAM, their technology should be more scalable than WBT and other filament-based ReRAMs. However, WBT are already well ahead in that race, having achieved 28nm and now working on 22nm, while 4DS have been stuck at 40nm for several years now, apparently unable to achieve satisfactory results.
It is worth noting also, that 4DS have been working on their technology about twice as long as WBT.
"Is this the case with the 4DS Crystalline design?"No, just the...
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