On the eMemory website, there's a technical document and a webinar.
https://www.ememory.com.tw/en-US/Products/Product?guid=21032918111993
Both appear to show their ReRam device uses transition-metal oxide layers (Ta2O5, TaOx), which I seem to recall are non-standard for the foundries, unlike weebit's SiO2. I'm no expert, perhaps others with more detailed knowledge could comment.
All IMHO, DYOR
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