Zhang added that the RRAM is capable of 10-year retention at 125 degrees C and 10,000 cycles of endurance. Details were not provided of the RRAM material structure – of which there are many alternatives. TSMC has published numerous papers on RRAMs based on layered transition metal-oxide structures typically including a TiO2, suggesting bipolar operation.
https://www.eenewsanalog.com/news/tsmc-offers-22nm-rram-taking-mram-16nm
Webinar Tomorrow 2/03/2021, page-29
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