@Fatman8although I keep coming back to...

@Fatman8

although I keep coming back to hafnium.....

https://www.eenewsanalog.com/en/iedm-ferroelectric-fet-hafnium-oxide-round-up/


intel and global are both across hafnium for very interesting reasons
Intel eDRAM / DRAM


GF are using Si-doped HfO2 staked ferro electric gate and reported FeFET gate platform at 28nm and on FD-SOI at 22nm ..target market embedded NVM ......

and this
https://semiengineering.com/fefets-bring-promise-and-challenges/
But a number of other materials have been evaluated, and one in particular is gaining momentum — hafnium oxide (HfO2 — also referred to as hafnia in some papers). “PZT loses its ferroelectric properties when scaled to very thin layers,” said Dr. Stefan Müller, CTO of FMC. “This is where ferroelectric HfO2 actually obtains its ferroelectric properties.”The voltages required to flip the dipole depend strongly on the materials used. Some papers discuss voltages as high as 20 volts. Others have much lower voltages. “It’s different material systems with different polarizations over different thicknesses,” noted Sven Beyer, deputy director, technology and integration, eNVM at GlobalFoundries. “2 to 5 volts is the range where we are working. If you go lower, you get into disturb [issues], and 5 volts is usually something that a lot of chips have [for I/Os].”

seems to fit for weebit if its some sort of new development ...and we know it's GMs' area of expertise......with many others


but its all guesswork till something is known