Thanks for this summary....just how I remember it also.
I want to share a conversation I had with Coby after the presentation. I asked him about Samsung as they have been very active on social media telling the market that they are taking their 3D vertical Nand to 200 layers to increase power efficiency speed and storage capacity. What I didn't know was that this is actually a discreet memory solution and he mentioned that Samsung are actually pursuing MRam as their flash solution in the embedded NVM space. He then went on to highlight that customers are pushing back on MRam because of its cost and complexity. The implications are that if/when Samsung cut their losses on MRam and chase a ReRam solution the industry will really be turned on its head quickly given how aggressive Samsung is. Remember the slide about their publicly stated investment in the semi conductor industry....approx 350bn from memory.
GLTAH DYOR
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