**riel Molas was born in 1979 in Paris, France.He received the BS and MS in Physics Engineering, with microelectronics specialization (2001), and the Ph.D. degree in micro- and nano-electronics from the Polytechnics Institute of Grenoble, France (2004), with a thesis on few electron memories .
He joined LETI (Laboratory of Electronics, Technology and Instrumentation of CEA, Grenoble) as a research engineer in 2004.
His research interests concern the processing, engineering, electrical characterization and modeling of innovative non-volatile memory devices.
From 2004 to 2008, he was a research scientist, working on the processing of innovative memory devices, and involved in various industrial and institutional projects.
From 2008 to 2011, he was responsible for the “Charge trap memory” activity in the LETI memory component laboratory.He was responsible from the LETI side of various industrial and institutional projects.
In 2011, he moved to Resistive RAM (CBRAM, OXRAM), being in charge of industrial projects.Since 2016, he is LETI senior expert on non-volatile memories.Since 2018, he is in charge of LETI RRAM activity.In 2020 he was also nominated scientific delegate of microelectronic service of LETI.
He is author or co-author of more than 140 publications in international conferences (including 23 IEDM and more than 17 invited talks), 1 shortcourse (IEDM), 1 tutorial, 47 papers in refereed journals, 4 book chapters, 20 patents, 23 as H index.
He is a reviewer of several international journals (IEEE journals, Solid State Elec…).He is/was a member of several technical committees (IEDM “Memory Technology” subcommittee 2010-2011, IEEE ESSDERC technical committee 2015, IRPS “Neuromorphic Computing” committee 2019, 2020) and organizing committees (co-organizer of Fall MRS Memory Symposium 2015 -2016, 2016-2019 IEEE International Memory Workshop organizing committee, 2018 general chair, 2020 advisory committee member, ESSDERC 2020 Financial chair).In 2019 he became IEEE senior member.
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