The development of the Leti ovonic threshold switch (OTS)...

The development of the Leti ovonic threshold switch (OTS) selector is aimed at GByte scale crossbar arrays for stand alone NVRAM produced at advanced nodes (22nm and below). At this stage, the selector of choice for embedded ReRAM is a transistor (MOSFET) in a 1T1R architechture (no need to get fancy with these small arrays).

The extracts appear to be from a patent relating to Leti's OTS selector, extending the standard crossbar selector architecture (1S1R) to a new (presumably more compact and/or efficient) arrangement. This from the WIPO website (via Google Translate):
"The assembly according to the invention therefore comprises two selector/memory assemblies 1S1R, independently addressable and making it possible to store two distinct pieces of information in a non-volatile manner. In other words, the set is of type nSnR where n is at least equal to two."

Here is the link to the search page of the WIPO website (World Intellectual Property Organisation):

https://patentscope.wipo.int/search/en/search.jsf

From there search for WO2023118527, which will take you to the the title page "WO2023118527 - ASSEMBLY COMPRISING AT LEAST TWO NON-VOLATILE RESISTIVE MEMORIES AND TWO SELECTORS, ASSOCIATED MATRIX AND MANUFACTURING METHOD" of the patent, which includes an abstract.

More detail is available under the other tabs. The description is in French, so unless you are proficient in French you will need to use a translation tool. Unfortunately Google Translate (which I use) does not seem to be able to translate the whole page at once (and nor does the translation tool on the website), which makes reading the material quite tedious.