I've just gone done a rabbit hole looking at CEA-Leti's FD-SOI technology. I've got Samsung firming to be the first Tier 1 signing, mass production maturity using FD-SOI technology was reached in 2016. TSMC got the jump on them with Ream and looks like it's advantage GF in regards to FD-SOI.
They should be breaking ground about now on The NextGen project.
"In fact, Google has adopted this technology for its 5G millimeter band emitter-receiver, which is equipping its new generation of Pixel 6 smartphones, launched in October 2021. This radiofrequency component is equipped with 28-nanometer FD-SOI technology made by Samsung licensed to STMicroelectronics".
"Some of the most pioneering work with FD-SOI has been done at semiconductor foundries around the world"
"STMicroelectronics adopted FD-SOI technology in 2012 and started several projects. The company demonstrated an ARM-based application processor for smart-phones with 3 GHz+ operating frequency on 28nm FD-SOI . The technology is now used at STMicroelectronics for many diversified markets"
"In 2014, Samsung announced the adoption of 28nm FD-SOI technology for its foundry division . Mass production maturity was reached in 2016 , and the first product release was announced recently"
"In 2015, GLOBALFOUNDRIES developed a 22nm FD-SOI technology called 22FDX , which it positioned as offering the best performance/cost ratio. This FD-SOI technology platform achieved performance close to 16nm/14nm FinFET at a cost similar to 28nm bulk silicon. The first commercial product was announced in February 2017 by GLOBALFOUNDRIES and Dream Chip Technologies. GLOBALFOUNDRIES’ technology is now almost fully qualified, with volume ramp-up expected this year"
"In Asia, the Chinese foundry Huali has announced its intention to include 22nm FD-SOI technology in its fab2 plan, offering the Chinese market greater access to FD-SOI technology"
"In Japan, Renesas’ experience with FD-SOI includes work on a very low-power FD-SOI technology called silicon- on-thin-BOx (SOTB), which targets low-power MCU markets. This technology has been supported by the LEAP initiative (Low-Power Electronics Association and Project) and is now available in 65nm. Renesas has reported very low-power consumption with this platform, as small as a tenth of that achieved using bulk silicon"
After a couple of years in mass production GF surpass $2 billion in design win revenue.
"GLOBALFOUNDRIES today announced that the company’s 22nm FD-SOI (22FDX®) technology has delivered more than two billion dollars of client design win revenue. With more than 50 total client designs, 22FDX is proving to be the industry’s leading platform for power-optimized chips across a broad range of high-growth applications such as automotive, 5G connectivity and the Internet of Things (IoT)"
Coby mentioned GF were looking to incorporate Renesas CBRAM and our Reram. Is GF looking a bit further down the track at us for Edge AI? No mention of automotive in both announcements.
"CBRAM’s low power consumption, high read/write speeds, reduced manufacturing costs and tolerance for harsh environments make it particularly suitable for consumer, medical, and select industrial applications"
This was from our tape-out ANN.
"Weebit ReRAM in 22nm FD-SOI process provides cost-effective, reliable embedded NVM for IoT, edge AI and other ultra-low power applications"
It looks like GF have had their sights on CBRAM for some time.
"In 2020, GF entered into a licensing agreement with Dialog Semiconductor, which was acquired by Renesas in 2021, to offer its CBRAM technology as an embedded, NVM option. Today, CBRAM is being qualified on the company’s 22FDX® platform, with plans to extend it to other platforms"
(20min delay)