Weebit -2024 and beyond. But some education- now!

Hi all - Some posters seem to have '0' or little knowledge of Weebit's product. Some maybe even think ' flash ' is what happens when taking a photo.
So if you have a Sentiment of say 'Sell' 'None' ' Hold ' and a Position of ' Not Held ', maybe - just maybe the following may enlighten you. Your choice.

So-to me a 'None' 'Sell' 'Not Held' indicates you may have some 'space' some where (with due respect)- Remember 'you cannot learn less'

SEE ALL AT-------- (plus other -information - all about WBT---
https://www.weebit-nano.com/technology/reram-advantages/ Also a great 'Glossary' https://www.weebit-nano.com/investors/glossary/

Below has some wording cut -reduced form original -without detriment to the information….

--The Weebit ReRAM Advantage Today we are seeing an explosion of innovation in electronic devices – with ever-more immersive and intelligent technologies fast becoming integral parts of our lives.The industry needs a new type of NVM (non volatile memory) to support this new era of devices and apps.

--NVM must be extremely low power to support IoT and battery-operated devices. It must have excellent endurance and retention – even at high temperatures and in harsh conditions – to support long-lifecycle automotive and industrial applications.

-must be scalable to advanced process nodes to support emerging applications such as AI and advanced IoT.

--WBT’s highlyscalable ReRAM (alsocalled RRAM)is an ideal successor to today’s NVM solutions.

Note -------Weebit ReRAM -beats flash onkey metrics including cost, power consumption, endurance, access time, and more. It also wins on these metrics when compared to other forms of emergingNVM.

---High Endurance Endurance – the number of times a memory can be reliably written in its lifetime – varies significantly between different memory types.

- WBT ReRAM typically has 10x-100x better endurance than flash, handling between 100,000 and a million write cycles versus the typical 10,000 program/erase cycles that flash can manage.

- means WBT ReRAM - support applications requiring frequent memory updates such as automotive and security – where frequent updates are typical as well as data logging.

---Excellent Data Retention even at High Temperatures -refers to how long stored data will be saved on the device - specified temperature.

-most NVM devices at ~10 years @ 85°C or 105°C -normally can’t achieve such retention at higher temperatures.- - WBT ReRAM maintains reliability --at high temperatures -retaining data up to ten years at 150°C or even 20 years at 125°C. -makes WBT ReRAM great fit for automotive, power, and industrial apps.

---Low Power Consumption -factors impacting NVM power consumption can vary widely based on apps -WBT ReRAM consumes significantly less Read, Write Standby power than embedded flash, -contributes a longer battery life for many devices -low voltage levels used for these memory transactions, coupled with fast memory access time, greatly reduce overall power consumed by WBT ReRAM.

---Fast Access Time -WBT ReRAM has direct read/write functions and is bit addressable, leads to fast cell Read/Write + enhanced system performance. Flash needs to access entire blocks of data every time it erases data, leads to slower write access time. WBT ReRAM typically 100x faster write access time than flash, -also faster than other NVMs.

---Tolerance to Environmental Conditions Radiation tolerance is important consideration in numerous medical, industrial and aerospace applications

-. Flash has limited radiation tolerance - requires redundancy or shielding when used in these apps, leads to added cost. WBT ReRAM cells withstand up to 350x more radiation than flash. Immunity to electromagnetic fields, another important consideration for many similar appstore. MRAM has, by definition (being magnetic memory), limited tolerance to electromagnetic fields. ReRAM cells, unlike other emerging memory technologies, are immune to electromagnetic fields. WBT ReRAM is also thermally stable and operates consistently at a broad range of temperatures.

---BEOL Technology (BEOL-FEOL---back end of line -front----- )An important benefit of ReRAM it’s a BEOL manufacturing technology is easy to integrate with any FEOL technology. Flash integrated in FEOL alongside many key analog components – often forcing compromises that lead to lower performance, larger size, higher cost.Since ReRAM (RRAM) is integrated in BEOL, -- no need for compromise.

Fact that ReRAM is BEOL also means it only needs to be adapted to a geometry in a fab once for all the variants of that geometry (low power, high voltage, etc.), unlike flash + other FEOL technologies which need to be adapted separately to each variant.

---Lower Cost and Complexity WBT ReRAM is based on the most common materials used in fabs today, it uses standard tools and process flows, it doesn’t require special equipment- additional floor space, which makes it easy to integrate our ReRAM into any CMOS manufacturing flow. Compared to other emerging NVMs, ReRAM a much simpler - cost-effective stack to produce. The WBT stack comprises two layers between electrodes. MRAM comprises more than 10 layers, and these layers can be so thin that they are often difficult to accurately deposit and monitor. WBT’s ReRAM requires only two additional masks, compared to more than 10 added masks for Flash. As a result, WBT ReRAM only adds ~5% to the wafer cost, whereas flash and MRAM both add ~20-30%, and even 40% in some process nodes. WBT’s ReRAM is inherently lower power than flash, consumes fewer resources to manufacture. A result, it has a smaller GHG (greenhouse gas) emission footprint. And ReRAM doesn’t require rare earth materials, materials used don’t have high contamination risk.

XXX This one is Phantom GWW’s -baby:- --Designed for Security

WBT’s ReRAM demonstrates significant security-related advantages, enabling it to better protect its content from hacking attacks, making it more difficult to reverse engineer. Unlike floating gate devices -as flash, ReRAM does not use any charges or other particles, it is more difficult to sense or change its internal state using electron beams. ReRAM is also immune to electromagnetic fields, enabling it to easily withstand magnetic attacks. In addition, because the ReRAM bit cell is deeply embedded between two metal layers integrated at the BEOL, it is more immune to optical (laser) attacks. Lastly, careful design of WBT ReRAM cells and associated control logic allow it to perfectly balance its power profile when reading its content, makes it more immune to power analysis hacking.

--Enabling Wafer Level Packaging (WLP)

A number of applications such as smart cards, wearables, smartphones and others can benefit from the low cost, thin form factor and ease of manufacturing provided by wafer-level chip-scale packaging (WLCSP). With wafer-level packaging, ICs are packaged while they are still part of the wafer, compared to the traditional process of being packaged after being sliced into individual dies. This process has numerous advantages, but it requires very high temperatures of ~350^oC, which many NVMs can’t withstand. Our ReRAM is capable of withstanding these temperatures, making it ideal for such designs.