more on the NuMemory offering :Selector only Memory number #2...

more on the NuMemory offering :

Selector only Memory number #2 next to SKHynix ...

Chinese fabless semiconductor startup Numemory is developing storage-class memory (SCM) chips using Optane-like phase change memory and crossbar technology.


sounds very similar to Hynix
10x faster read and write speeds and 5x longer endurance than NAND chips. Xincun Technology was established in July 2022 and has developed a 3D selector-only memory (SOM) technology using phase-change memory and a crossbar structure

optane on steroids - Numemory says the NM101 has low latency.

A patent, CN118215387A, relating to PCM and a SOM SCM device between DRAM and NAND, states: “SOM differs from 3DXPoint memory in that the memory cells that it uses a cross-point structure (crossbar) consist of only one selector. The SOM memory has the advantages of simple structure, high scalability, high SET/RESET speed, good cycle life, vertical stacking, no write crosstalk caused by thermal effect and the like, is a very promising nonvolatile memory, and has obvious advantages in the fields of high-speed computing interconnection, high-bandwidth memory (HBM) and the like.
”There is also patent CN118301944A, which relates to a hard mask layer in SOM fabrication.

If the NM101 is viable and can be manufactured and sold successfully – unlike Optane – China will have a real SCM memory device that should be faster than accelerated SSDs such as from Solidigm, Micron, and Kioxia. That should speed applications running in SCM-assisted servers and storage systems.
We can assume the domestic Chinese market will be its initial focus with sales outside China a possibility once manufacturing volume ramps up high enough.

need a product/chip breakdown to verify data on this one

thankyou to Ricky Gremmelmaier /SSD memory and Storage optimiser.