Ann: Successful data retention and endurance results, page-2

14 Nov, 2017 – Weebit Nano (ASX: WBT), an Israel-based semiconductor company that is seeking to develop the next generation of memory technology, is pleased to report promising preliminary evaluation results of endurance and data retention measurement on 4Kb (Kilo Bit) arrays on 300nm cells. These results successfully conclude the 300nm 4Kb characterisation.
The characterisation measurement was performed on 300nm 4Kb memory array cell structures under a variety of temperature and duration conditions at 150°C, 200°C and 260°C, monitoring the ability of the ReRAM cells to maintain their resistivity levels within industry acceptable ranges. The 260°C temperature is of great importance as it is the temperature used when soldering chipsets into printed circuit boards. Weebit Nano’s 4Kb array maintained its programmed data after 30 minutes at 260°C, exceeding the soldering requirement of 15 minutes at this temperature and allowing several soldering cycles.
In addition, data retention lifetime extrapolation demonstrated the ability to maintain written data for 10 years at above room temperature.
Endurance characteristics were done under various voltage levels and timing durations to assess the ability of the memory to endure multiple re-write cycles. Very pleasingly, the endurance results are significantly higher than the program/erase cycling of existing Flash technology.
While this is only preliminary data, the Company is very encouraged with the results achieved as it provides additional data points for the Weebit Nano ReRAM manufacturability and product reliability potential that will be critical for possible commercialisation discussions.